Samsung begins to release 40-nm, 4 GB DDR3 memory

Samsung has announced the introduction of the world's first DDR3 memory chip capacity of 4 GB, made by the norms of 40-nm process. These modules will be different not only in large volume, but also to improve the energy efficiency of servers and high-performance notebooks. The plans for the production of data memory company first announced in July last year. New, "Green Memory" will ensure lower energy consumption to 35% of what has been achieved by doubling the density.

In the first 40-nm, 4 GB DDR3 memory is designed for servers, which currently are usually six slots for RAM, which corresponds to the maximum volume of 96 GB. This DDR2 memory module density 1-gigabit made on standards of 60 nm, consumes 210 Watts, DDR3 density of 2 Gbit, manufactured to standards of 40 nm, consumes 55 watts, and power consumption of 4 GB DDR3 from Samsung was 36 Tues What is only 17% of DDR2 on cell density of 1 Gbit, made by rules 60 nm.

For notebook users the introduction of new memory means a doubling of the maximum amount of RAM - for SO-DIMM module, this means up to 8 GB. In the near future the company Samsung plans to move to 40-nm process up to 90% of the total output of DDR memory.